Voltage-Induced Switching Results and Improvements in Material Stacks

Voltage-Induced Switching Results and Improvements in Material Stacks. Left side depicts switching results from nanoscale [80 nm x 80 nm] magnetic memory bits showing voltage-induced switching at ~0.7 ns with very low write energy and control of switching time via the applied pulse amplitude. Right side depicts vibrating sample magnetometer [VSM] results, which show that improved material stacks result in a significant increase of interfacial PMA (perpendicular magnetic anisotropy).

Credit: 
TANMS