Extreme Ultraviolet Image-Plane Holographic Microscopy

Extreme Ultraviolet Image-Plane Holographic Microscopy. This microscopy allows reconstruction of absorption- and phase-contrast images from a weakly absorbing object (here, a Si elbow pattern fabricated onto a Si3N4 membrane). The absorption contrast between the Si pattern and membrane is 30%, which is reflected in the absorption-contrast image. The phase variation in the phase-contrast image is 2.3±0.3 rad., which accurately measures that expected from the 100 nm thick Si lines.