Manufacturing process that promotes the growth of the cubic phase of GaN crystal structures
![](https://erc-assoc.org/sites/default/files/styles/page_width/public/LESA1-R-GaNpatent_BH.jpg?itok=68sUYK03)
A team of LESA researchers were awarded a U.S. patent for a manufacturing process that promotes the growth of the cubic phase of GaN crystal structures. This research addresses two limitations in using LEDs for high-efficiency, color-tunable systems and displays.
Credit:
LESA
Related content:
Related center: