Novel 3D Power Module Package Building on Advantages of Silicon Carbide

Achievement date: 
2020
Outcome/accomplishment: 

A novel, 3D power module package for silicon carbide (SiC) power device was designed and fabricated by researchers at the Center for Power Optimization of Electro-Thermal Systems (POETS), an NSF-funded Engineering Research Center (ERC) based at the University of Illinois.

Impact/benefits: 

This new packaging architecture helps build on the advantages of silicon carbide, including high switching speed, low switching loss, and ability to withstand high temperatures to enable high-frequency, high-temperature power electronics. The architecture reflects trends in SiC including optimized layout, advanced interconnection technologies, and efficient cooling system.

Explanation/Background: 

SiC metal-oxide-silicon field-effect transistors (MOSFETs) benefit from higher blocking voltage, lower on-state resistance, and higher thermal conductivity than their silicon counterparts. The enhanced performance is derived from the material advantages inherent in silicon-carbide physics of high-power and high-voltage semiconductor devices POETS’s advanced module architecture goes beyond even most conceived 3D double-sided cooled modules by integrating cooling within an LTCC (low temperature co-fired ceramics) layer, providing 4-sided cooling. This approach leads to an effective heat transfer capability 3X-4X that of conventional 2D SiC commercial power modules. Further, the module boasts sub-nanoHenry parasitic inductances that are key to lower losses by an order of magnitude in high-frequency applications. This leads to higher efficiency, higher power density power converters that are 10X more power dense (> 100 kW/l) than previously commercialized. 

The new architecture advanced earlier research by using non-conventional materials, including low-temperature, co-fired ceramics and nickel-plated copper balls. The optimized half-bridge module, based on common SiC MOSFET, used 3D power routing to minimize stray parasitic inductance. The module also used vertical and horizontal cooling paths to maximize heat dissipation.